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FGH40N60 IGBT Isolated Gate Bipolar Transistor 600V 40A
Product Details
Insulated Gate Bipolar Transistor (IGBT)
Collector to Emitter Voltage 600V
Gate to Emitter Voltage +-20V
Low Saturation Voltage: VCE(sat) 1.8 V @ IC = 40 A
Collector Current 40A @ 100 degC
Maximum Power Dissipation 116W @ 100 degC
Package TO-247 3L
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